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| (R) STPS10L40CT/CG/CF/CFP LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) s 2x5 A 40 V 150C 0.46 V A1 K A2 FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB and D2PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. s s s K A2 K A1 A2 A1 TO-220FPAB STPS10L40CFP D2PAK STPS10L40CG A2 A1 K A1 A2 K TO-220AB STPS10L40CT ISOWATT220AB STPS10L40CF ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AB D2PAK ISOWATT220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc =135C = 0.5 Tc =115C = 0.5 Per diode Per device Per diode Per device Value 40 20 5 10 5 10 150 1 2 2700 - 65 to + 150 150 10000 Unit V A A A A A A W C C V/s tp = 10 ms Sinusoidal tp=2 s square F=1kHz tp = 100 s tp = 1s square Tj = 25C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/7 July 2003 - Ed: 5B STPS10L40CT/CG/CF/CFP THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Rth (j-c) Rth (c) Junction to case ISOWATT220AB TO-220FPAB Junction to case Parameter TO-220AB D2PAK Per diode Total Coupling Per diode Total Coupling Value 3 1.7 0.35 5 3.8 2.5 C/W Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. Max. 0.2 Unit mA mA V VR = VRRM 8 IF = 5 A IF = 5 A IF = 10 A IF = 10 A 0.49 0.36 25 0.53 0.46 0.67 0.59 VF * To evaluate the conduction losses use the following equation : P = 0.33 x IF(AV) + 0.026 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 3.5 3.0 2.5 =1 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) 5 4 3 T Rth(j-a)=15C/W 2.0 1.5 1.0 0.5 IF(av) (A) =tp/T 2 1 tp T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 =tp/T tp Tamb(C) 50 75 100 125 150 0 25 2/7 STPS10L40CT/CG/CF/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). IM(A) 80 70 60 50 IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 Tc=25C Tc=75C Tc=25C Tc=75C 40 30 20 10 Tc=125C t IM t Tc=125C =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 0 1E-3 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AB and D2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T Single pulse = 0.5 = 0.2 = 0.1 = 0.2 = 0.1 T 0.2 tp(s) 1E-2 1E-1 =tp/T tp Single pulse tp(s) =tp/T tp 1E+0 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 3/7 STPS10L40CT/CG/CF Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 F=1MHz Tj=25C 1E+2 1E+1 1E+0 Tj=100C 100 1E-1 Tj=25C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 10 1 2 5 VR(V) 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m)( D2PAK). Rth(j-a) (C/W) 80 100.0 IFM(A) Tj=150C Typical values 70 60 50 40 30 20 VFM(V) 10.0 Tj=125C 1.0 Tj=25C 10 1.2 1.4 1.6 1.8 0.1 0.0 S(Cu) (cm) 0 4 8 12 16 20 24 28 32 36 40 0.2 0.4 0.6 0.8 1.0 0 4/6 STPS10L40CT/CG/CF/CFP PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. PACKAGE MECHANICAL DATA TO-220FPAB REF. A H B Dia L6 L2 L3 F2 D F1 L4 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.193 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.70 0.016 0.027 0.60 1 0.024 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.204 2.40 2.70 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.204 9.8 10.7 0.385 0.421 15.8 16.4 0.621 0.645 9.00 9.90 0.354 0.389 2.9 3.50 0.114 0.18 5/7 STPS10L40CT/CG/CF/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0 8 0 8 A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/7 STPS10L40CT/CG/CF/CFP PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.50 2.70 0.098 0.106 2.50 2.75 0.098 0.108 0.40 0.70 0.016 0.028 0.75 1.00 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 typ. 0.630 typ. 28.60 30.60 1.125 1.205 9.80 10.60 0.386 0.417 15.90 16.40 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Ordering type STPS10L40CT STPS10L40CFP STPS10L40CG STPS10L40CG-TR STPS10L40CF s s Marking STPS10L40CT STPS10L40CFP STPS10L40CG STPS10L40CG STPS10L40CF Package TO-220AB TO-200FPAB D2PAK D2PAK ISOWATT220AB Weight 2.23g 2g 1.48g 1.48g 2.08g Base qty 50 50 50 1000 50 Delivery mode Tube Tube Tube Tape & reel Tube s s Cooling method : by conduction (C) Recommended torque value : 0.55 N.m. Maximum torque value : 0.70 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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